Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases (Q62675592)
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Language:
(P31) (Q13442814)
(P304) 124-132
(P433) 1-2
(P478) 326
(P577) +1995-03-00T00:00:00Z
(P1433) (Q14421668)
(P1476) "Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases" (language: en)
(P2093) H. Kobayashi
Y. Yamashita
T. Mori
Y. Nakato
K.H. Park
Y. Nishioka
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