Preparation and characterization of molecule-based transistors with a 50-nanometer source-drain separation with use of shadow deposition techniques. Toward faster, more sensitive molecule-based devices
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"Preparation and characterization of molecule-based transistors with a 50-nanometer source-drain separation with use of shadow deposition techniques. Toward faster, more sensitive molecule-based devices" (language: en)
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E. Tracy Turner Jones
Oliver M. Chyan
Mark S. Wrighton
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