Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect (Q53033226)
scientific article published on 20 November 2007
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(P1476) "Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect" (language: en)
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other details
description scientific article published on 20 November 2007

External Links
(P356) 10.1103/PHYSREVLETT.99.216802
(P698) 18233240
(P818) cond-mat/0611342