Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy (Q114766557)
scientific article published in 1987
Language:
(P31) (Q13442814)
(P304) 670-672
(P407) (Q1860)
(P433) 9
(P478) 51
(P577) Monday, August 31, 1987
(P1433) (Q621615)
(P1476) "Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy" (language: en)
(P2093) L. T. P. Allen
E. R. Weber
J. Washburn
Y. C. Pao
(P2860) (Q114769328)
other details
description scientific article published in 1987

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